Hydrogen, fluorine ion implantation effe
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Akihisa Yoshida; Masatoshi Kitagawa; Fumiyo Tojo; Nobutaka Egashira; Keisuke Nak
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Article
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1994
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Elsevier Science
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English
β 310 KB
The influences of hydrogen and fluorine ion implantation on polycrystalline silicon (poly-Si) grain boundaries have been investigated. Effective passivation of poly-Si grain boundaries was achieved by hydrogen ion implantation at 300-400Β°C. From fluorine implantation experiments, we confirmed that f