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Influence of grain boundaries on hydrogen transport in polycrystalline silicon

✍ Scribed by N.H. Nickel; W.B. Jackson; J. Walker


Book ID
117149052
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
133 KB
Volume
227-230
Category
Article
ISSN
0022-3093

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Hydrogen, fluorine ion implantation effe
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The influences of hydrogen and fluorine ion implantation on polycrystalline silicon (poly-Si) grain boundaries have been investigated. Effective passivation of poly-Si grain boundaries was achieved by hydrogen ion implantation at 300-400Β°C. From fluorine implantation experiments, we confirmed that f