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Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon

✍ Scribed by Pezzi, R. P.; Miotti, L.; Bastos, K. P.; Soares, G. V.; Driemeier, C.; Baumvol, I. J. R.; Punchaipetch, P.; Pant, G.; Gnade, B. E.; Wallace, R. M.; Rotondaro, A.; Visokay, J. M.; Chambers, J. J.; Colombo, L.

Book ID
121849849
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
323 KB
Volume
85
Category
Article
ISSN
0003-6951

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πŸ“œ SIMILAR VOLUMES

Some mechanisms for the incorporation of
Some mechanisms for the incorporation of hydrogen in Hf-based gate dielectric films on Si
✍ Driemeier, C. ;Baumvol, I. J. R. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 285 KB

## Abstract Hf‐based materials are the leading candidates to replace SiO~2~ gate dielectrics in future Si‐based metal–oxide–semiconductor field‐effect transistors and H inside gate dielectrics has recognized roles on device performance and reliability. In this context, by employing nuclear reaction