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Gate dielectric and contact effects in hydrogenated amorphous silicon-silicon nitride thin-film transistors

✍ Scribed by N. Lustig; J. Kanicki

Book ID: 126514574
Publisher: American Institute of Physics
Year: 1989
Tongue: English
Weight: 730 KB
Volume: 65
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.343361

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