Some mechanisms for the incorporation of hydrogen in Hf-based gate dielectric films on Si
✍ Scribed by Driemeier, C. ;Baumvol, I. J. R.
- Book ID
- 105364266
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 285 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Hf‐based materials are the leading candidates to replace SiO~2~ gate dielectrics in future Si‐based metal–oxide–semiconductor field‐effect transistors and H inside gate dielectrics has recognized roles on device performance and reliability. In this context, by employing nuclear reaction analyses of ^1^H and ^2^H nuclides as well as X‐ray photoelectron spectroscopy, H incorporation in HfSiO, HfSiN, and HfO~2~ films on Si was accessed. Two technologically relevant H sources were investigated, namely annealing in H~2~ at 400–600 °C and room temperature exposure to water vapour. We found that annealing in H~2~ leads to high (when compared to SiO~2~) bulk H incorporation in HfSiO and HfSiN films, probably reflecting higher density of H trapping sites in these Hf‐based materials. On the other hand, H incorporation in HfO~2~ films occurs mainly at HfO~2~ surface, without measurable H incorporation in HfO~2~ bulk. Moreover, by exposing HfO~2~ films on Si to water vapour we showed the formation of a hydroxylated HfO~2~ surface as well as migration of water‐derived species through HfO~2~ films, incorporating water‐derived species at the interfacial region between HfO~2~ and Si. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)