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HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions

✍ Scribed by L.M. Zhang; C.H. Zhang; L.Q. Zhang; X.J. Jia; L.H. Han; C.L. Xu; Y. Zhang; Y.F. Jin

No coin nor oath required. For personal study only.

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HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3&#xa0;MeV Ne and 5.3&#xa0;MeV Kr ions