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How Si(0 0 1)–4×3-In reconstruction improves the epitaxial quality of InSb films grown on Si(0 0 1) substrates

✍ Scribed by B.V. Rao; M. Atoji; D.M. Li; T. Tambo; C. Tatsuyama

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How Si(0&#xa0;0&#xa0;1)–4×3-In reconstruction improves the epitaxial quality of InSb films grown on Si(0&#xa0;0&#xa0;1) substrates