Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors

✍ Scribed by Russell Sceats; Angela Dyson; Carl J. Hepburn; Richard J. Potter; Adrian Boland-Thoms; Naci Balkan; Geoff Hill; Chris C. Button; Steve Pinches

• Book ID: 104428472
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 76 KB
• Volume: 17
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00884-6

✦ Synopsis

A novel type of GaInAsP/InP surface emitting device is investigated in this work, consisting of an InP p-n junction with a GaInAsP quantum well placed on the n-side of the junction within the depletion region. The device is grown between a bottom GaInAsP/InP distributed Bragg re ector (DBR), with a re ectivity of less than 90%, and top Si3N4=SiO2 dielectric DBR with a re ectivity of 99%. Therefore, the device is an ultra-bright surface emitter in a quasi-vertical resonant cavity. Electrical contacts are di used into the active layers and hence the excess electrons and holes are injected longitudinally; therefore, current does not have to pass through the DBR layers.