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Hot electron light emission from a GaInAsP/InP structure

✍ Scribed by Sceats, R.; Dyson, A.; Potter, R.; Boland-Thoms, A.; Balkan, N.; Adams, M.J.; Button, C.C.


Book ID
114455869
Publisher
The Institution of Electrical Engineers
Year
2001
Tongue
English
Weight
542 KB
Volume
148
Category
Article
ISSN
1350-2433

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Hot electron light emission from GaInAsP
✍ Russell Sceats; Angela Dyson; Carl J. Hepburn; Richard J. Potter; Adrian Boland- πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 76 KB

A novel type of GaInAsP/InP surface emitting device is investigated in this work, consisting of an InP p-n junction with a GaInAsP quantum well placed on the n-side of the junction within the depletion region. The device is grown between a bottom GaInAsP/InP distributed Bragg re ector (DBR), with a