Hot electron light emission from GaInAsP
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Russell Sceats; Angela Dyson; Carl J. Hepburn; Richard J. Potter; Adrian Boland-
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Article
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2003
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Elsevier Science
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English
⚖ 76 KB
A novel type of GaInAsP/InP surface emitting device is investigated in this work, consisting of an InP p-n junction with a GaInAsP quantum well placed on the n-side of the junction within the depletion region. The device is grown between a bottom GaInAsP/InP distributed Bragg re ector (DBR), with a