Hot-electron-induced degradation and post-stress recovery of bipolar transistor gain and noise characteristics

✍ Scribed by Sun, C.J.; Reinhard, D.K.; Grotjohn, T.A.; Huang, C.J.; Yu, C.C.W.

• Book ID: 114534727
• Publisher: IEEE
• Year: 1992
• Tongue: English
• Weight: 343 KB
• Volume: 39
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.155892