The effects of b-ray irradiation on the electrical characteristics of Au/SiO 2 /n-Si (MOS) structures have been investigated using capacitance-voltage (C-V) and conductance-voltage (G/x-V) measurements. The MOS structures were irradiated with beta rays at doses up to 30 kGy. The C-V and G/x-V charac
✦ LIBER ✦
Hot carrier effect—model, mechanism and effects on C-V and I-V characteristics in MOS structures
✍ Scribed by Zhao Cezhou; Zhang Desheng; Shi Baohua
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 270 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0026-2714
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