We report the use of high sensitivity electroluminescence (EL) techniques to study intervalley scattering processes in single barrier p-i-n GaAs/AlGaAs/GaAs heterostructures. The EL experiments provide spectroscopic information on the nature of the intervalley scattering mechanisms and on their rel
Hot-carrier distribution function in nonparabolic energy bands
β Scribed by D. Matz
- Publisher
- Elsevier Science
- Year
- 1967
- Tongue
- English
- Weight
- 864 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0022-3697
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π SIMILAR VOLUMES
Experimental datz are presented which provide 2 comparison of the electron energy dlstrrhution functions for the gases C9H4, N9 and Ar. used in electron attachment studies. Standard carrier gases for swarm studies alone or combined with electron beam data are recommended.
The donor binding energies in finite GaAs/Ga x Al 1-x As quantum wells have been calculated by considering the confinement of electrons, which increases as the well width increases. The variational solutions have been improved by using a two-parameter trial wavefunction, and by including the conduct