Using a variational procedure within the effective-mass approximation we have calculated the binding energies of shallow-donor impurities in cylindrical GaAs quantum-well wires, in an axial magnetic field and an infinite confinement potential. In contrast to the previous results in quantum wells, we
Donor binding energies in GaAs quantum wells considering the band nonparabolicity effects and the wavefunction elongation
β Scribed by S. Aktas; S.E. Okan; I. Erdogan; H. Akbas; M. Tomak
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 140 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
The donor binding energies in finite GaAs/Ga x Al 1-x As quantum wells have been calculated by considering the confinement of electrons, which increases as the well width increases. The variational solutions have been improved by using a two-parameter trial wavefunction, and by including the conduction band nonparabolicity. It is shown that the method used gives results in agreement with those obtained in the experiments on the effective mass and the donor binding energy, both of which are strongly dependent on the well width.
π SIMILAR VOLUMES
The effects of mixing between the \(\Gamma\) and \(X\) valleys of the conduction band on the binding energy of a shallow donor in a thin type I AlAs/GaAs quantum well are investigated. The multivalley effective mass equations are solved variationally, with a separable hydrogen-like trial function. T
Within the effective-mass approximation a simple method to calculate the spectra of a shallowdonor impurity in GaAsΒ±(Ga, Al)As cylindrical quantum-well wires (QWWs) suitable for any confinement potential shape in radial direction is proposed. A trial function is taken as the product of a hydrogenic
We carried out variational model calculations for the assessment of the combined effect of the nonparabolicity of the electron effective mass and the screening of the donor ion by the valence electrons of GaAs for a donor placed at the center of a spherical quantum dot. We considered finite confinin
The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence
The binding energy of the single and double bound polaron bound to a helium-type donor impurity in quantum wells (QWs) subject to a perpendicular electric field are calculated by a variational method. The couplings of an electron and the impurity with various phonon modes are considered. The results