The role of higher energy bands in hot carrier transport investigated by electroluminescence spectroscopy
✍ Scribed by J.W. Cockburn; J.J. Finley; M.S. Skolnick; P. Wisniewski; R. Teissier; R. Grey; G. Hill; M.A. Pate
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 78 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We report the use of high sensitivity electroluminescence (EL) techniques to study intervalley scattering processes in single barrier p-i-n GaAs/AlGaAs/GaAs heterostructures.
The EL experiments provide spectroscopic information on the nature of the intervalley scattering mechanisms and on their relative strengths, as well as providing estimates of the -L and -X intervalley scattering times. In addition, we observe clear evidence for quasi-ballistic transport of holes injected into the spin-orbit split-off valence band within the n-type regions of the structures.