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Hot-carrier degradation of nMOSTs stressed at 4.2 K

✍ Scribed by E. Simoen; C. Claeys


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
491 KB
Volume
36
Category
Article
ISSN
0038-1101

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## Abstract The degradation produced by channel hot‐carrier (CHC) on short channel transistors with high‐k dielectric has been analyzed. For short channel transistors (__L__<0.15 ¡m), the most damaging stress condition has been found to be __V__~G~=__V__~D~ instead of the β€˜classical’ __V__~G~=__V__