This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic
β¦ LIBER β¦
Homoepitaxial and heteroepitaxial growth of InGaN/GaN
β Scribed by Shiro Sakai
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 373 KB
- Volume
- 83
- Category
- Article
- ISSN
- 8756-663X
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