✦ LIBER ✦

Homo-epitaxial Si absorber layers grown by low-temperature ECRCVD

✍ Scribed by B. Rau; I. Sieber; B. Selle; S. Brehme; U. Knipper; S. Gall; W. Fuhs

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strained Si1−xGex layers grown by low-te

✍ Benjamin O. Chan; Stephen A. Healy; Martin A. Green 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 482 KB

High resistivity InP layer grown by low

✍ K. Ohtsuka; T. Ohishi; Y. Abe; H. Sugimoto; T. Matsui 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 321 KB

Phase transformation of crystallinity of

✍ Seung-Chang Lee; Jeong Yong Lee; Sun Jin Yun 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 586 KB

In situ temperature measurement by infra

✍ J. C. Sturm; P. V. Schwartz; P. M. Garone 📂 Article 📅 1990 🏛 Springer US 🌐 English ⚖ 342 KB

High quality AlGaAs layers grown by mole

✍ K. H. Chang; J. S. Wu; D. G. Liu; D. C. Liou; C. P. Lee 📂 Article 📅 1992 🏛 Springer US 🌐 English ⚖ 464 KB

Epitaxial GaAs grown directly on (100)Si

✍ S.K. Shastry; S. Zemon; M. Oren 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 592 KB