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High resistivity InP layer grown by low temperature liquid phase epitaxy

✍ Scribed by K. Ohtsuka; T. Ohishi; Y. Abe; H. Sugimoto; T. Matsui

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
321 KB
Volume
106
Category
Article
ISSN
0022-0248

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## Abstract In this paper the growth of Al~x~Ga~1–x~As layers with nearly constant composition along their thickness is described. By means of electroluminescence and cathodoluminescence measurements recombination mechanisms connected with the presence of Si are discussed. The aging behaviour of th