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Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature

✍ Scribed by Riddet, C.; Watling, J.R.; Chan, K.; Parker, E.H.C.; Whall, T.E.; Leadley, D.R.; Asenov, A.

Book ID: 114620985
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 848 KB
Volume: 59
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2012.2194498

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