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Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment: Herbert S. Bennett Solid-St. Electron. 26 (12), 1157 (1983)

Publisher: Elsevier Science
Year: 1987
Tongue: English
Weight: 71 KB
Volume: 18
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(87)80412-3

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