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Highly sensitive In0.53Ga0.47As/InP Hall sensors grown by MOVPE

✍ Scribed by Kyburz, R.; Schmid, J.; Popovic, R.S.; Melchior, H.


Book ID
114535581
Publisher
IEEE
Year
1994
Tongue
English
Weight
681 KB
Volume
41
Category
Article
ISSN
0018-9383

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InGaAs/InP multi-quantum well structures, grown by metal-organic vapour phase-epitaxy, were investigated by Raman spectroscopy and X-ray diffractometry to analyse the influence of precursor gas switching parameters on the interface abruptness. Owing to carry-over effects, InAsP is formed at the InGa