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High-voltage thyristors and diodes made of neutron-irradiated silicon

✍ Scribed by Platzoder, K.; Loch, K.


Book ID
114592135
Publisher
IEEE
Year
1976
Tongue
English
Weight
386 KB
Volume
23
Category
Article
ISSN
0018-9383

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Diodes containing a high concentration of generation-recombination centres can behave in a way, which is not predicted by standard diode theory. Full one-dimensional modelling is reported of the current through a long PIN semiconductor diode with different concentrations of shallow donors and accept