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High-Temperature Stable IrxSi Gates With High Work Function on HfSiON p-MOSFETs

✍ Scribed by B. F. Hung; C. H. Wu; Albert Chin; S. J. Wang; F. Y. Yen; Y. T. Hou; Y. Jin; H. J. Tao; Shih C. Chen; Mong-Song Liang

No coin nor oath required. For personal study only.

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