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High temperature property studies of the 6H-SiC MOS capacitor

✍ Scribed by WeiBing Mu; Min Gong; Qun Cao


Book ID
107363864
Publisher
Science in China Press (SCP)
Year
2010
Tongue
English
Weight
448 KB
Volume
54
Category
Article
ISSN
1672-1799

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Comparative study of 4H-SiC and 2H-GaN M
✍ Chow, T. Paul ;Naik, H. ;Li, Z. πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 822 KB

## Abstract We have comparatively characterized the electrical characteristics of 4H‐SiC and 2H‐GaN MOS capacitors and FETs. While progressive refinement of gate oxide processes, notably with NO anneal, has resulted in better threshold voltage control, reduced subthreshold slope and higher field‐ef