Hot-pressed SiC with small additions of aluminium has been deformed at 1600 °C by three-point bending and studied by transmission electron microscopy. This paper reports observations of Shockley partials ~ (10 i 0). These dislocations result from the activation of dissociated dislocation sources loc
✦ LIBER ✦
High temperature creep and transmission electron microscopy of GaAs
✍ Scribed by R. Behrensmeier; H.G. Brion; H. Siethoff; P. Veyssière; P. Haasen
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 320 KB
- Volume
- 137
- Category
- Article
- ISSN
- 0921-5093
No coin nor oath required. For personal study only.
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