✦ LIBER ✦
Transmission electron microscopy studies of dislocation mechanisms in as-sintered α-SiC and after creep experiments at high temperature
✍ Scribed by S.J. Lee; J. Vicens
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 642 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
Hot-pressed SiC with small additions of aluminium has been deformed at 1600 °C by three-point bending and studied by transmission electron microscopy. This paper reports observations of Shockley partials ~ (10 i 0). These dislocations result from the activation of dissociated dislocation sources located in the basal plane. Evidence of dissociated dislocation climb has been found and two different climb mechanisms are proposed. Defects in the as-sintered material have been studied and two examples are presented.