High-temperature-annealing effects on the electrical properties of RF sputtered SnO2 thin films for microelectronic sensors
β Scribed by SK Andreev; LI Popova; VK Gueorguiev; EB Manolov
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 427 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0042-207X
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π SIMILAR VOLUMES
TiO 2 thin films were deposited on unheated and heated glass substrates at an elevated sputtering pressure of 3 Pa by radio frequency (RF) reactive magnetron sputtering. TiO 2 films deposited at room temperature were annealed in air for 1 h at various temperatures ranging from 300 to 600 Β°C. The str
ZnO thin films were deposited on corning glass substrates by RF magnetron sputtering at room temperature. The dependence of crystal structure, morphology and optical properties on postdeposition annealing was investigated using XRD, AFM and UV-vis Spectrophotometer. The asdeposited films were amorph