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High-temperature acidic ammonothermal method for GaN crystal growth

โœ Scribed by Yoshida, Kazuo; Aoki, Kensuke; Fukuda, Tsuguo

Book ID
121226181
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
953 KB
Volume
393
Category
Article
ISSN
0022-0248

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[Springer Series in Materials Science] T
[Springer Series in Materials Science] Technology of Gallium Nitride Crystal Growth Volume 133 || Acidic Ammonothermal Growth Technology for GaN
โœ Ehrentraut, Dirk; Meissner, Elke; Bockowski, Michal ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Springer Berlin Heidelberg ๐ŸŒ German โš– 773 KB

This Book Discusses The Important Technological Aspects Of The Growth Of Gan Single Crystals By Hvpe, Mocvd, Ammonothermal And Flux Methods For The Purpose Of Free-standing Gan Wafer Production.