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Bulk GaN single crystal growth for substrate by solvent-thermal method

✍ Scribed by T. I. Shin; H. J. Lee; K. W. Chung; M. S. Kang; D. H. Yoon

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
111 KB
Volume
1
Category
Article
ISSN
1862-6351

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πŸ“œ SIMILAR VOLUMES

Growth behaviour of bulk GaN single crys
Growth behaviour of bulk GaN single crystals grown with various flux ratios using solvent-thermal method
✍ T. I. Shin; D. H. Yoon πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 227 KB

## Abstract Bulk GaN single crystals were grown using a solvent‐thermal method. They were grown for 200 h at 600 Β°C and 800 Β°C using 8 MPa of N~2~ gas and 1–3 mm sized pyramid GaN single crystals. Pure Na, NaN~3~ and Ca were used as the flux. The mole fraction of the [flux]/([flux] + [Ga]) was 0.30