✦ LIBER ✦

High-speed high-resolution signal processing for multicell silicon drift detectors

✍ Scribed by Hansen, K.; Reinecke, M.; Klar, H.; Benca, M.

Book ID: 121016888
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 425 KB
Volume: 49
Category: Article
ISSN: 0018-9499
DOI: 10.1109/TNS.2002.1003669

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Silicon drift detectors for high resolut

Silicon drift detectors for high resolution room temperature X-ray spectroscopy

✍ Peter Lechner; Stefan Eckbauer; Robert Hartmann; Susanne Krisch; Dieter Hauff; R 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 418 KB

Optimized readout methods of silicon dri

Optimized readout methods of silicon drift detectors for high-resolution X-ray spectroscopy

✍ A. Niculae; P. Lechner; H. Soltau; G. Lutz; L. Strüder; C. Fiorini; A. Longoni 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 437 KB

A monolithic array of silicon, drift det

A monolithic array of silicon, drift detectors for high-resolution gamma-ray imaging

✍ Fiorini, C.; Longoni, A.; Perotti, F.; Labanti, C.; Rossi, E.; Lechner, P.; Solt 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 314 KB

High-speed low-noise 8 channel BiCMOS pr

High-speed low-noise 8 channel BiCMOS preamplifier for silicon drift detector readout

✍ Andrea Castoldi; Antonio Galimberti 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 283 KB

High-speed, compact silicon and hybrid p

High-speed, compact silicon and hybrid plasmonic waveguides for signal processing

✍ Su, Yikai ;Zhou, Gan ;Li, Fei ;Wang, Tao 📂 Article 📅 2011 🏛 Higher Education Press and Springer 🌐 English ⚖ 328 KB

Processing high-quality silicon for micr

Processing high-quality silicon for microstrip detectors

✍ F. Nava; G. Ottaviani; R. Tonini; S. Frabboni; A.Alberigi Quaranta; P. Cantoni; 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 558 KB

An investigation has been made into the behaviour of high-purity silicon (HP-%) during the fabrication of microstrip detectors. The resistivity of the silicon used is 3 kS1 cm. The investigation is centred on standard bipolar processes based on ion implantation. It is found that, comparing the proce