✦ LIBER ✦

High-speed and low-noise AlInN/GaN HEMTs on SiC

✍ Scribed by Sun, Haifeng ;Alt, Andreas R. ;Benedickter, Hansruedi ;Feltin, Eric ;Carlin, Jean-François ;Gonschorek, Marcus ;Grandjean, Nicolas ;Bolognesi, C. R.

Book ID: 105366003
Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 411 KB
Volume: 208
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201000518

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low-Noise Microwave Performance of 0.1 $

Low-Noise Microwave Performance of 0.1 $\mu$m Gate AlInN/GaN HEMTs on SiC

✍ Haifeng Sun, ; Alt, A R; Benedickter, H; Feltin, E; Carlin, J; Gonschorek, M; Gr 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 269 KB

AlGaN/GaN HEMTs on SiC with over 100 GHz

AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise

✍ Wu Lu; Jinwei Yang; Khan, M.A.; Adesida, I. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 121 KB

Microwave noise characteristics of AlGaN

Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers

✍ Lee, J.-W.; Kuliev, A.; Kumar, V.; Schwindt, R.; Adesida, I. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 161 KB

AlInN/AlN/GaN HEMT Technology on SiC Wit

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

✍ Sarazin, N.; Morvan, E.; di Forte Poisson, M.A.; Oualli, M.; Gaquiere, C.; Jarde 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 321 KB

Strained AlInN/GaN HEMTs on SiC With 2.1

Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency

✍ Chabak, Kelson D; Trejo, Manuel; Crespo, Antonio; Walker, Dennis E; Jinwei Yang, 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 136 KB

High-efficiency GaN HEMTs on 3-inch semi

High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates

✍ Waltereit, P. ;Bronner, W. ;Quay, R. ;Dammann, M. ;Müller, S. ;Kiefer, R. ;Rayno 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 358 KB

## Abstract We report on device performance and reliability of our 3″ GaN high electron mobility transistor (HEMT) technology. AlGaN/GaN HEMT structures are grown on semi‐insulating SiC substrates by metal‐organic chemical vapor deposition (MOCVD) with sheet resistance uniformities better than 2%.