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High sensitivity Hall elements made from Si-doped InAs on GaAs substrates by molecular beam epitaxy

✍ Scribed by Tatsuro Iwabuchi; Takashi Ito; Masaki Yamamoto; Kentaro Sako; Yuichi Kanayama; Kazuhiro Nagase; Takashi Yoshida; Fumiaki Ichimori; Ichiro Shibasaki

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 378 KB
Volume: 150
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)80149-7

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