Temperature dependence of photoluminescence from high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy

Room temperature lasing of quantum wire

Room temperature lasing of quantum wire VCSELs by optical pumping grown on the (7 7 5)B GaAs substrates by MBE

✍ Y Ohno; H Kanamori; S Shimomura; S Hiyamizu 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 118 KB

We report optically pumped lasing action at room temperature (RT) of self-organized quantum wire (QWR) vertical cavity surface emitting lasers (VCSELs) grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy (MBE). The (7 7 5)B InGaAs QWRs have a regularly corrugated AlAs-on-InGaAs uppe

Temperature dependence of photoluminescence from high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (7&#xa0;7&#xa0;5)B-oriented GaAs substrates by molecular beam epitaxy

Temperature dependence of photoluminescence from high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy