Room temperature lasing of quantum wire VCSELs by optical pumping grown on the (7 7 5)B GaAs substrates by MBE

✍ Scribed by Y Ohno; H Kanamori; S Shimomura; S Hiyamizu

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 118 KB
• Volume: 13
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00228-x

✦ Synopsis

We report optically pumped lasing action at room temperature (RT) of self-organized quantum wire (QWR) vertical cavity surface emitting lasers (VCSELs) grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy (MBE). The (7 7 5)B InGaAs QWRs have a regularly corrugated AlAs-on-InGaAs upper interface (average lateral period of 40 nm and a vertical amplitude of 1:5 nm) and a at InGaAs-on-AlAs lower interface. The VCSELs with an active region containing ÿve (7 7 5)B InGaAs QWR layers (well width of Lw = 3 nm) were fabricated and they were optically pumped by a continuous wave titanium-doped sapphire laser, and they oscillated at RT with threshold pump power of 1:8 W= m 2 , and their lasing wavelength was 846:1 nm. This is the ÿrst lasing action at RT in self-organized QWR VCSELs using surface corrugation on vicinal substrates, to our knowledge.