## Abstract This paper presents the design of a high‐efficiency LDMOS power‐amplifier module (PAM) at the 880‐MHz band. The nonlinear parameters for the LDMOS FET are obtained through the modified SPICE level‐3 static and large‐signal analyses. It shows an output power of 30.2 dBm and power‐added e
✦ LIBER ✦
High sensitivity d.c. amplifier with superconducting modulator
✍ Scribed by V.N Kachinskiĩ
- Publisher
- Elsevier Science
- Year
- 1965
- Tongue
- English
- Weight
- 207 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0011-2275
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