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Theoretical analysis of d.c. characteristics of semiconductor coupled high Tc superconducting MISFETs

✍ Scribed by J.F. Jiang; J. Pei; Y.S. Tang; X. Yu; H.M. Jiang; G.F. Zang; S. Wang

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 326 KB
Volume: 30
Category: Article
ISSN: 0011-2275
DOI: 10.1016/0011-2275(90)90220-7

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✦ Synopsis

This paper presents a theoretical analysis of the d.c. characteristics of the semiconductor coupled high T o superconductor MISFET (SCHTSMISFET). Source and drain are made from a high To oxide superconductor such as YBCO, BSCCO or TBCCO. Semiconductors such as Si, GaAs, InAs and InSb are used as substrate. A semiconductor inversion layer lies between source and drain electrodes as a coupling range. D.c. characteristics include those of current-voltage, voltage amplification and inverter. Results of the study show that the SCHTSMISFET has encouraging characteristics for use in microelectronics.

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