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High-efficiency class-C power-amplifier module

✍ Scribed by Ki-Jae Song; Jong-Chul Lee; Byungje Lee; Jong-Heon Kim; Nam-Young Kim

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
467 KB
Volume
40
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

This paper presents the design of a high‐efficiency LDMOS power‐amplifier module (PAM) at the 880‐MHz band. The nonlinear parameters for the LDMOS FET are obtained through the modified SPICE level‐3 static and large‐signal analyses. It shows an output power of 30.2 dBm and power‐added efficiency (PAE) of 64%, with a transducer power gain of 28.78 dB. In this paper, the harmonic‐trap network (HTN) is introduced to maximize the PAE and the winding transmission line (WTL) is adopted to obtain the optimizing output matching point between the output power and PAE. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 164–167, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11317

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