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High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers

โœ Scribed by Li, Wei; Bergman, Peder; Ivanov, Ivan; Ni, Wei-Xin; Amano, H.; Akasa, I.


Book ID
120262382
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
338 KB
Volume
69
Category
Article
ISSN
0003-6951

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Infrared reflectance analysis of GaN epi
โœ Z.C. Feng; T.R. Yang; Y.T. Hou ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 282 KB

Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes