## Abstract ZnO crystals grown by the vertical Bridgman technique were comprehensively characterized in view of the impurities and intrinsic defects in the material. It is shown that residual Al is the cause of the residual nโtype conductivity and intrinsic defects play only a minor role in the sam
โฆ LIBER โฆ
High-resistivity GaSb bulk crystals grown by the vertical bridgman method
โ Scribed by R. Pino; Y. Ko; P. S. Dutta
- Book ID
- 107453109
- Publisher
- Springer US
- Year
- 2004
- Tongue
- English
- Weight
- 181 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0361-5235
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