๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

High-rate deposition of nanostructured SiC films by thermal plasma PVD

โœ Scribed by X.H Wang; K Eguchi; C Iwamoto; T Yoshida

Book ID
117996276
Publisher
Institute of Physics and National Institute of Materials Science
Year
2002
Tongue
English
Weight
740 KB
Volume
3
Category
Article
ISSN
1468-6996

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Thermal plasma deposition of nanostructu
Thermal plasma deposition of nanostructured films
โœ Neuman, A.; Blum, J.; Tymiak, N.; Wong, Z.; Rao, N.P.; Gerberich, W.; McMurry, P ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› IEEE ๐ŸŒ English โš– 279 KB
Thermoelectric properties of SiC thick f
Thermoelectric properties of SiC thick films deposited by thermal plasma physical vapor deposition
โœ X.H Wang; A Yamamoto; K Eguchi; H Obara; T Yoshida ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Institute of Physics and National Institute of Mat ๐ŸŒ English โš– 348 KB

SiC thick films of about 300 mm could be prepared with a deposition rate above 300 nm/s by thermal plasma physical vapor deposition (TPPVD) using ultrafine SiC powder as a starting material. The thermoelectric properties were investigated as a function of composition and doping content. The nondoped