SiC thick films of about 300 mm could be prepared with a deposition rate above 300 nm/s by thermal plasma physical vapor deposition (TPPVD) using ultrafine SiC powder as a starting material. The thermoelectric properties were investigated as a function of composition and doping content. The nondoped
β¦ LIBER β¦
Ultrafast thermal plasma physical vapor deposition of thick SiC films
β Scribed by X.H. Wang; K. Eguchi; C. Iwamoto; T. Yoshida
- Publisher
- Institute of Physics and National Institute of Materials Science
- Year
- 2003
- Tongue
- English
- Weight
- 401 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1468-6996
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