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High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method

✍ Scribed by T. Matsuyama; N. Terada; T. Baba; T. Sawada; S. Tsuge; K. Wakisaka; S. Tsuda


Book ID
115991117
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
387 KB
Volume
198-200
Category
Article
ISSN
0022-3093

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Polycrystalline silicon germanium thin f
✍ Iwasa, Takehiro ;Kaneko, Tetsuya ;Nakamura, Isao ;Isomura, Masao πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 574 KB

## Abstract The aluminum‐induced crystallization (AIC) of amorphous silicon germanium (a‐SiGe) was investigated in bilayer structure of aluminum (Al) and a‐SiGe at the eutectic temperature of Al–Ge system (420 °C) or higher temperature. Due to energy dispersive X‐ray spectroscopy (EDX) measurements