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High-quality n-Si/i-p+-i SiGe/n-Si structure grown by ultra high vacuum chemical molecular epitaxy

✍ Scribed by Jinshu Zhang; Hongyong Jia; Peiyi Chen; Pei-Hsin Tsien; M. X. Feng; Q. Y. Lin; Tai-Chin Lo


Book ID
110271772
Publisher
Springer US
Year
1999
Tongue
English
Weight
119 KB
Volume
10
Category
Article
ISSN
0957-4522

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Normal incidence p–i–n Ge heterojunction
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We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 Β°C without thermal annealing and allowing the integration w