High Quality GaN Grown by Raised-Pressure HVPE
β Scribed by Bohyama, S. ;Yoshikawa, K. ;Naoi, H. ;Miyake, H. ;Hiramatsu, K. ;Iyechika, Y. ;Maeda, T.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 835 KB
- Volume
- 194
- Category
- Article
- ISSN
- 0031-8965
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## Abstract The crystallographic structures of the various Metalorganic Vapour Phase Epitaxy (MOVPE) thin GaN epitaxial layers deposited on (00.1) sapphire substrates are described and compared with the structural properties of the thick gallium nitride layers deposited by Hydride Vapour Phase Epit
We analyse the dislocation distribution in GaN and AlN bulk crystals by transmission electron microscopy and X-ray diffraction. The crystals are grown by hydride vapour phase epitaxy onto 6H-SiC[0001] and Si(111) substrates. Two essentially different dislocation populations are observed: (i) a-type