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High-quality crystalline layer transfer from a silicon-on-insulator substrate onto a sapphire substrate using wafer bonding

✍ Scribed by D. V. Singh; L. Shi; K. W. Guarini; P. M. Mooney; S. J. Koester; A. Grill


Book ID
107452918
Publisher
Springer US
Year
2003
Tongue
English
Weight
108 KB
Volume
32
Category
Article
ISSN
0361-5235

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## Abstract Crack‐free and low‐dislocation‐density AlGaN was successfully grown on grooved AlN layer. UV light‐emitting diodes (LEDs) with a peak wavelength of 330 nm on these AlGaN films were fabricated. The efficiency of the UV LEDs is found to be strongly affected by the crystalline quality of t