High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm

✍ Scribed by V. Rakovics; M. Serényi; F. Koltai; S. Püspöki; Z. Lábadi

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 248 KB
• Volume: 28
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(94)90068-x

✦ Synopsis

InP/InGaAsP buried heterostructure lasers for a wavelength of 1.15/~m with optimized parameters can play an important role as pump sources for blue-upwards conversion fiber lasers. This paper reports the single-step liquid phase epitaxial growth and characterization of a double-channelled substrate InP/InGaAsP buried heterostructure laser diode for a wavelength of 1.15 #m. Optimum conditions for separate growth of an InGaAsP buried active layer on the double-channelled InP substrate have been obtained. Output powers over 100 mW have been obtained by determining the appropriate cavity length and the reflectivity of the mirror facets. High power single-transverse mode operation and a nearly symmetrical beam of the lasers are advantageous for pumping of fiber lasers.