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High-performance ZnO nanowire field effect transistors

โœ Scribed by Chang, Pai-Chun; Fan, Zhiyong; Chien, Chung-Jen; Stichtenoth, Daniel; Ronning, Carsten; Lu, Jia Grace


Book ID
120552267
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
613 KB
Volume
89
Category
Article
ISSN
0003-6951

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Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon n