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High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

✍ Scribed by Cha, S. N.; Jang, J. E.; Choi, Y.; Amaratunga, G. A. J.; Ho, G. W.; Welland, M. E.; Hasko, D. G.; Kang, D.-J.; Kim, J. M.

Book ID: 120185663
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 490 KB
Volume: 89
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2416249

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