High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique

✍ Scribed by Irisawa, T.; Numata, T.; Tezuka, T.; Usuda, K.; Hirashita, N.; Sugiyama, N.; Toyoda, E.; Takagi, S.-I.

• Book ID: 114618491
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 506 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.884078