Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

✍ Scribed by M. Valenza; J. El Husseini; F. Martinez; M. Bawedin; C. Le Royer; J.F. Damlencourt

• Book ID: 113916107
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 786 KB
• Volume: 70
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2011.11.016